Abstract
The stationary energy-transport equations for semiconductors in three space dimensions are numerically discretized. The physical variables are the electron density, the energy density, and the electric potential. Physically motivated mixed Dirichlet–Neumann boundary conditions are employed. The numerical approximation is based on a hybridized mixed finite-element method with Raviart–Thomas–Nédélec elements, applied to the dual-entropy formulation of the energy-transport model. For the solution of the nonlinear discrete system, a Newton scheme with adaptive potential stepping and two decoupling Gummel-type strategies with reduced rank extrapolation are proposed. Multigate field-effect transistors in two dimensions and three dimensions are numerically simulated.
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