Abstract
The authors present the results of a thorough study on the effects of dynamic gate bias on GaAs power FET performance. Detailed information concerning the effects of gate bias changes on gain, input return loss, and linearity are included. A two-stage linear power amplifier was built and tested that successfully demonstrated dynamic gate bias optimization. This amplifier produced over 5 W of output power at the L-band with high efficiency and excellent linearity. >
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