Abstract
A depletion-mode metal-insulator-semiconductor field-effect transistor has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device has been successfully operated at 300 °C displaying pinch off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS/mm has been measured, the highest reported value to date for this type of device.
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