Abstract
Junction temperature monitoring of IGBT modules is crucial for power devices in high power applications. In this paper, a thermo-sensitive electrical parameter based on the maximum collector current falling rate -dIC/dtmax for trench/field-stop IGBT junction temperature extraction is outlined. The inherent monotonic relationship between the maximum collector current falling rate and chip temperature is explored. Fortunately, the intrinsic parasitic inductance LeE of IGBT module can be directly used as the maximum collector current falling rate sensor. Experimental measurements of Trench/Field-Stop IGBT module rated at 1700V/3600A are implemented to show that the dependence between the IGBT chip temperature and maximum collector current falling rate approximates in a linear way. This indicates that the collector current falling rate is a potential thermo-sensitive electrical parameter (TSEP) for high power IGBT modules junction temperature extraction.
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