A thermionic-emission-diffusion model for graded base Pnp heterojunction bipolar transistors

Abstract

An analytical model which matches thermionic-emission-diffusion of holes across the emitter-base heterojunction with drift-diffusion transport across a graded base has been developed and used to examine the performance capabilities of InP-based Pnp heterojunction bipolar transistors (HBTs). Hole drift-diffusion across the emitter-base space charge region is shown to be of comparable importance to thermionic emission in controlling hole injection into the base. The effects of compositional base grading on the recombination currents is also taken into account. Compositional grading of the base is shown to enhance the device’s current gain by as much as a factor of 10 by reducing recombination in the quasi-neutral base. More importantly, compositional base grading significantly reduces the base transit time which improves the device’s peak cutoff frequency by as much as a factor of 1.5. A cutoff frequency as high as 35 GHz is found to be possible. The analysis indicates that composition grading of the base can be useful in developing high performance Pnp InP-based HBTs.