Abstract
We report a thermally resistant and air-stable n-type semiconductor based on our study of naphthalene diimide (NTCDI) derivatives ( N1, N2, and N3) with various numbers of electron-withdrawing CF 3 groups. The device using N3, which contains aromatic NTCDI, was found to exhibit an electron mobility ( μ e) of 0.15 (±0.04) cm 2/V s (the maximum μ e observed was 0.24 cm 2/V s) and an I on/I off (at V d = 80 V) of approximately 2 × 10 5. Moreover, the N3 device exhibits excellent air stability, even when exposed to the open air for 42 days, and significantly better thermal resistance than the previously reported benzylic imide derivative R1.
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