Abstract
In this work, we have studied Joule heating in carbon nanotube based very large scale integration (VLSI) interconnects and incorporated Joule heating influenced scattering in our previously developed current transport model. The theoretical model explains breakdown in carbon nanotube resistance which limits the current density. We have also studied scattering parameters of carbon nanotube (CNT) interconnects and compared with the earlier work. For 1 µm length single-wall carbon nanotube, 3 dB frequency in S12 parameter reduces to ~120 GHz from 1 THz considering Joule heating. It has been found that bias voltage has little effect on scattering parameters, while length has very strong effect on scattering parameters.
Highlights
The current complementary metal oxide semiconductor (CMOS) technology in nm- and sub-nm node for very large scale integration (VLSI) is facing challenges due to performance limitation ofCu/low-k dielectric material as an interconnection, because of increased resistivity of Cu, electromigartion and void formation [1,2]
Temperature profiles along the single-wall carbon nanotube (SWCNT) length can be numerically solved from steady state heat equation given by Carslaw and Jaeger [28], A∇ (κ∇T ) + p − g (T − T ′) = 0 (21)
The terminal temperatures of SWCNT are assumed to be at 350 K which is the normal operating temperature of a typical bulk semiconductor
Summary
The current complementary metal oxide semiconductor (CMOS) technology in nm- and sub-nm node for very large scale integration (VLSI) is facing challenges due to performance limitation of. Though carbon nanotube has high thermal conductivity, it has been observed experimentally that the conducting carbon nanotube breaks down due to Joule heating which limits its current density [11,12]. Thermal effects in VLSI interconnect limits the current density and there have been problems of breakdown in carbon nanotubes due to resistive heating [18,19,20,21]. Santini [23] has done exhaustive experimental studies on Joule heating-induced breakdown of carbon nanotube interconnects and attribute to the defect sites as observed by Huang et al [22]. We have examined the problem of Joule heating in carbon nanotube interconnects based on one-dimensional fluid model of electronic transport considering various scattering mechanisms and studied the temperature distribution across the length of the nanotube and scattering parameters.
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