Abstract
An In0.53Ga0.47As/InP avalanche photodiodes (APD) structure with double multiplication layers and double charge layers has been proposed. The calculated results with considering the dead space effect show that a thin 2nd multiplication layer will reduce the excess noise factor F in this structure for a fixed mean gain <G>. And its performances will reach the best when the 2nd multiplication layer is 0.01µm, which will reduce the excess noise factor 7% compared to a conventional APD for <G>=10. The effects of 1st and 2nd charge layers on the APD have also been studied in this paper.
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