Abstract
High-frequency distortion in bipolar transistors is examined by using the charge-control approach of Poon and Narayanan (H.C. Poon, IEEE Trans. Electron Dev., vol. ED-19, pp. 719-731, 1972; S. Narayanan and H.C. Poon, IEEE Trans. Circuit Theory, vol. CT-20, pp. 341-351, 1973; H.C. Poon, IEEE Trans. Electron Dev., vol. ED-21, pp. 110-112, 1974) to connect the device's distortion behavior to its loaded unity-current-gain frequency (/spl omega//spl circ//sub T/). The resulting expressions for the distortion reveal considerable information on its frequency and bias dependence. Points on the /spl omega//spl circ//sub T/ versus collector current curve yielding optimum distortion performance are identified and interpreted in terms of current cancellation. Both second- and third-order distortion are considered, and the results are validated by both simulation and experiment.
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