Abstract
A theory of high-field transport in two-valley semiconductors is developed and its implication in the high frequency devices is discussed. The main feature of the present work is the use of the Boltzmann equation with a space drift term retained as the starting point of the theory. The theory predicts the existence of a cold region near the cathode contact. In this region, electrons are not heated enough to transfer to the upper valleys. The Gunn oscillation is suppressed in a short diode comparable to the length of the cold region, even though the product n·l exceeds 1012cm-2. In this nonoscillating state, the average electron velocity surpasses the peak velocity of the static v-E curve, and consequently, an anomalously short transit time is expected. These theoretical results will have a great significance in the high frequency devices with short active regions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
