Abstract
Ab initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical vapor deposited (CVD) SiC layers. CVD conditions have been simulated by using the appropriate chemical potentials for hydrogen and phosphorus (P). We found that the most abundant defect is P at Si-site followed by P at C-site. The calculated concentrations of the P-donors and free carriers in CVD grown SiC agree with the experimental results.
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