Abstract
The silicon dioxide depolition on silicon substrates in the system was investigated in the temperature range from 80° to 400°C on a nozzle‐type reactor at atmospheric pressure. An exponential temperature dependence (of Arrhenius type) with a break at 250°C has been observed for the ratio corresponding to the maximum deposition rate and also for the ratio corresponding to near‐zero deposition rate in the retardation region. Within the bimolecular surface reaction theory (Langmuir‐Hinshelwood mechanism), these results are explained, and the break is interpreted as a change in the adsorption mechanism of the reactant gases with temperature. The apparent activation energy of the surface reaction (5.2–6.5 kcal/mol) in the temperature range from 80° to 400°C has been derived from the Arrhenius plot of the maximum deposition rate, in agreement with the above theory. An empirical reaction rate equation has been proposed which, in addition, explains the linear dependence of the maximum deposition rate on silane flow rate at constant ratio.
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