Abstract
The short-circuit admittance parameters for a silicon Schottky-barrier field-effect transistor (SBFET) fabricated on a high-resistivity substrate are calculated from first principles ignoring the effects of minority carriers. The calculations show the maximum frequency of oscillation for a device with a 1-/spl mu/m gate to be 17.9 GHz, neglecting the parasitic associated with the contact metallizations, and 14.7 GHz when the parasitic are included. In order to describe the dynamic behavior of the device, the static properties must first be obtained. The simultaneous solution of Poisson's equation and the continuity equation, both in two dimensions, gives the static charge and potential distribution in the device. The effects of a field-dependent mobility are included in the continuity equation. Using the results of static two-dimensional solutions, a one-dimensional device model is developed that permits the dynamic device behavior to be described by a one-dimensional linear ordinary differential equation. By solving this equation under appropriate boundary conditions, the device y parameters are found as functions of frequency. Calculated results are shown to be in good agreement with published experimental data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Microwave Theory and Techniques
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
