Abstract
The authors have carried out a theoretical investigation of the surface electronic structure of the relaxed GaP(110) surface and of a monolayer of Sb on GaP(110) by a self-consistent tight-binding method. These calculations, yielding band structure and local densities of states, show some marked differences from other calculations. In addition they have been able to determine the amount of charge transferred between the Sb overlayer and the substrate.
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