A theoretical modeling analysis for triboelectrification controlled light emitting diodes

Abstract

Abstract In this paper, we demonstrate the use of triboelectric nanogenerator (TENG) as a mean of mechanical light triggering to control InGaN-based light-emitting diodes (LEDs). Light extraction from the LED is two successive steps process. First, the voltage produced by the TENG is used to control the gate-to-source current of a MOSFET transistor through adjusting the transistor channel width and length. The second step is forwarding the drain-source current resulting from MOSFET transistor to the LED as its injection current to induce spontaneous emission from the LED surface to the air. Three LED colors are considered: red, green and blue. Significant emitted power from these InGaN-based LEDs in the RGB wavelength band is observed for both P-MOSFET and N-MOSFET transistor configurations. The emitted optical spectrum is controlled by optimizing the combined TENG-MOSFET-RGB LED geometry; dimensions and the bias voltage between the drain and source terminals of the MOSFET transistor. With recent advances in TENGs as an energy harvesting technology, it is expected that this study offers an approach to enhance the light extraction of various LED devices. With the enhancements in the performance of optoelectronic devices, the field of tribo-phototronics has attracted more attention, and in this work, we introduce the first theoretical framework, to the best of our knowledge, based on finite element modeling. This study provides significant insights into the working principles of tribo-Phototronic devices as well as guidelines for future device design.