Abstract
In this paper I have tried to theoretically investigate the electrical transport properties of the two dimensional electron gas of an Al_(0.3)Ga_(0.7)N/GaN heterostructure, and the most important effective parameters in the temperature-dependent behavior of the carrier mobility in the temperature range of 75 to 350 K have been studied. My analysis indicates that extrinsic scattering mechanisms, such as the ionized impurity due to interface charges and the crystal defects, have an important role in controlling the carrier mobility in this system. Also, in order to obtain good fit at high temperature, I have to change the value of the electron effective mass in this system. With this change, the polar optical scattering mechanism is dominant at high temperature.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
