A theoretical investigation of MoS2-based solar cells with CdS electron transport layer and V2O5 hole transport layer for boosting performance

Abstract

Researchers are becoming more interested in molybdenum disulfide (MoS2)-based photovoltaic cells because of their exceptional semiconducting qualities. The use of CdS ETL and V2O5 HTL in thin-film solar cells based on MoS2 has been studied. The effects of electron and hole concentration, generation and recombination, FF, VOC, JSC, band alignment, defect density, absorber layer thickness, buffer layer thickness, interface defect density, and PCE have all been thoroughly numerically analyzed. The SCAPS-1D simulation software was applied to conduct the aforementioned investigation. The study found that the V2O5 HTL design reached the maximum PCE at 35.13 % with a VOC of 1.0738 V, a JSC of 36.8308 mAcm−2, and a FF of 88.83 %. On the other hand, without HTL configuration, the PCE was 23.05 %, the VOC was 0.9049 V, the JSC was 29.4614 mAcm−2, and the FF was 86.45 %. These findings offer useful data and a practical plan for developing inexpensive, MoS2-based thin-film solar cells.