Abstract
In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet(FM)/barrier/FM junctions, we have theoretically investigated the multiple-valued (ormulti-level) cell property, which is in principle realized by sensing the conductances of fourstates recorded with magnetization configurations of two FMs; that is, (up, up),(up, down), (down, up), (down, down). To obtain such 4-valued conductances, wepropose FM1/spin-polarized barrier/FM2 junctions, where FM1 and FM2 aredifferent ferromagnets, and the barrier has spin dependence. The proposed ideais applied to the case of the barrier having localized spins. Assuming that allthe localized spins are pinned parallel to the magnetization axes of FM1 andFM2, 4-valued conductances are explicitly obtained for the case of many localizedspins. Furthermore, objectives for an ideal spin-polarized barrier are discussed.
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