Abstract
An effort has been made to understand the charge density distribution of the Si and Ge based diluted magnetic semiconductors. A theoretical analysis has been done on the variation of charge densities when the semiconductors Si and Ge are doped with the transition metal atoms of V, Mn and Co with different concentrations of x (0.02, 0.04, 0.06, 0.08, and 0.10), in Si1-xMx and Ge1-xMx. Two dimensional electron density contour maps have been plotted for all the compositions studied in this work. The theoretical mid bond densities were found out for the compounds which can be taken as the reference values for comparison of the experimental values of the same compositions.
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