Abstract
Due to lack of analytical solutions for equation of electrical neutrality under thermal equilibrium conditions, a novel and efficient numerical iteration technique was developed. The computational carrier concentration obtained by this new numerical method is in good correlation to commonly cited values and experimental data. Based on this new numerical method effects of some factors on the resistance of silicon piezoresistive pressure sensor were analyzed. Results show that no matter doping concentration is high or low the minority carrier exclusion effect disappears under considerably high current conditions, and increases in bias current induce greater maximum operating temperature; increases in doping concentration can increase the maximum operating temperature and decrease temperature coefficient of resistance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
