Abstract
Results of a theoretical analysis of the Schottky and anti-Frenkel defect formation in α-BN carried out within the framework of an ionic model and quasi-chemical approximation are presented. Equations for describing of the α-BN point defect formation as a function of the partial nitrogen pressure and temperature under different conditions of electrical neutrality are derived and solutions thereof are given. The equations derived allow prediction of any type of α-BN defects in any range of the partial nitrogen pressure and temperature. It is suggested that nitrogen vacancies constitute the predominant type of nonstoichiometric point defect in α-BN.
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