Abstract
An Auger recombination induced energetic carrier leakage model is presented, which takes into consideration the rate of generation of energetic carriers through Auger recombination processes, the rate of energy relaxation of the energetic carriers through carrier-phonon interactions, and the leakage of energetic carriers over the heterojunction barriers limited by diffusion and drift mechanisms. By including this energetic carrier leakage in the rate equations of injected carriers, the leakage behavior of GaInAsP/InP double heterojunction lasers and light emitting diodes can be calculated. Analytic results are found to be in excellent agreement with experimental measurements.
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