Abstract
In this work, the terahertz modulation properties of the quartz-based MAPbI3 thin film were investigated experimentally and theoretically. As can be seen from the experimental results, the terahertz wave transmittance of the MAPbI3/SiO2 sample decreases significantly with the external pump optical power increase, the maximum terahertz modulation depth of the modulator can reach 66.24% at 0.3 THz when the external pump optical power is up to 1500 mW. This work is a further step forward in practical applications of terahertz functional devices, which has good application prospects in the terahertz applied technology field.
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