Abstract
We have proposed a mechanism that could possibly mimic the well known phenomenon of the halide ions induced oscillations in Me|nM H2SO4 system. It is assumed that close to the Flade potential region or anodic side far from the Flade potential are the scenarios wherein the applied potential is greater than the pitting potential. Consequently, the pitting initiation process occurs with unit probability and hence the stochastic pitting growth process becomes independent from the instantaneous pit depth. This pitting growth phenomenon is captured by time dependent stochastic functions (double exponential) along with the deterministic component. The consequences of mimicking the spatial features of oxide film breakdown by using the time dependent stochastic functions, are also discussed. Furthermore, the additional results have been provided to validate the proposed temporal semi-stochastic form of the model.
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