Abstract
In this paper, an analytical model is proposed to model collector-emitter voltage rising slope ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV<sub>CE</sub>/dt</i> ) of field-stop (FS) IGBT during turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>CE</sub></i> rise transient is investigated. Based on the improved understanding of the <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V<sub>CE</sub></i> rise transient, an analytical solution of the excess carrier distribution in the N-base region and FS layer is derived. An analytical model for <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV<sub>CE</sub>/dt</i> of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters are included in the model. In the end, the double-pulse tests are performed on 650V/40A and 1200V/40A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.
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