Abstract
Abstract The structure of MBE-grown ZnO layers was investigated along with RF sputtered layers at around 600 ∘ C followed by a higher temperature anneal. The ZnO layers were either deposited directly on sapphire or on top of a GaN template. After the MBE growth on (0001)GaN, the analysed layers contain a large density of defects and the interface is not completely coherent on some 2–3 monolayers. In the case of RF sputtering, the samples comprised an Mn-doped part towards the surface on top of about a 150 nm pure ZnO layer. They exhibit a columnar structure and the adjacent domains are rotated from one another up to 90 ∘ , putting [ 10 1 ¯ 0 ] and [ 1 1 ¯ 20 ] directions parallel. At high Mn concentration this columnar structure is blurred by the formation of Mn-rich precipitates for which we report on the structure, composition and crystallographic relationships with the surrounding matrix.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
