A TEM Study of the Structure of Polycrystalline Si Films on (111) Si Substrates Grown by Low Pressure Chemical Vapor Deposition

Abstract

ABSTRACTA systematic series of films have been deposited on Si (111) wafers by the pyrolytic decomposition of disilane in a low pressure CVD reactor at temperatures below 765°C, at a variety of Si2H6 partial pressures. Usually, large columnar Si grains nucleate with the [110] fiber axis parallel to the [111] substrate normal, and exhibit a random arrangement of azimuthal orientations about this axis. Fine scale microtwinning and sub-grain boundaries which are often seen within individual columnar grains have been characterized by HREM. The facetted boundaries between individual columnar grains have also been characterized. The correlation between typical grain size, defect densities and Si2 H6 partial pressure is presented and the effect of changing partial pressure during growth is shown to be detrimental to film quality. Finally it is noted that randomly oriented polycrystalline Si films can be formed under certain growth conditions.