Abstract
This paper presents the results of a TCAD comparative study of an modified P–i–N diode (M-PiN) vs. modified mosaic contact P–i–N diode (M-MCPD). The P +/N + mosaic contact is formed on the anode’s surface by selective phosphorus and boron diffusion through its corresponding oxide mask. A significant reduction in the drift-region lifetime in the M-PiN rectifier is required to achieve the same short reverse recovery time observed in the M-MCPD rectifiers. The reduction in the reverse recovery time is mainly due to the fact that the M-MCPD rectifier has a smaller stored charge in the drift-region compared to the M-PiN rectifier. Since the forward voltage drop of the M-MCPD is not quite affected by different mosaic area ratios the M-MCPD rectifier exhibits a better trade-off between forward drop and switching characteristics compared to the M-PiN rectifier. The two-dimensional numerical study has been carried out using the circuit and system simulation programs from ISE-TCAD to realize the technological, electrical and mixed-mode simulation.
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