Abstract
We report on the investigation of light extraction efficiency enhancement at the flip-side surface of sapphire patterned by using femtosecond laser pulse irradiation. The enhancement was measured by means of fluorescence and confocal microscopies. Theoretical simulation (FDTD) gave the results. The variation of patterning geometry provided by different gap and pit size, by triangle and square array configuration revealed compactness of the pit network as an optimum condition for the enhancement. Maximum enhancement over 40% was obtained for the triangle array configuration. The appearance of ripples at the bottom of the pit corresponded to the enhancement. A deeper insight about consequences to radiative effects influenced by the ripples is presented.
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