Abstract

Corrosion resistance is a quantitative measure of materials under study in a special corrosion environment. With a continuous development in semiconductor IC industry on silicon wafer fabrication and the rapid shrinkage of silicon wafer feature size as of to 32nm, 25nm and even smaller, the requirement on corrosion resistance chamber materials under high density plasma becomes extremely critical and difficult. Therefore, the study, characterization and new development of corrosion resistance chamber materials have been a critical task for technologists in semiconductor IC industry. Without the correct selection of corrosion resistance chamber materials, it is impossible for semiconductor IC industry to achieve current technology levels. Among steps of semiconductor wafer fabrication, plasma dry etching is the most difficult and comprehensive step which has a very high standard for the selection of corrosion resistance chamber materials.

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