Abstract
The effects of different processing conditions on aluminum oxide passivating interlayers for silicon/titanium oxide contacts have been investigated. Surface recombination velocity (SRV) and specific contact resistivity are reported as a function of Al 2 O 3 thickness, substrate termination, and thermal treatment. It was observed that Al 2 O 3 passivated most effectively on hydrogen-terminated substrates, achieving an SRV of 20 cm·s−1(down from 100 cm·s−1 when wafers were only coated with TiO 2 ) and contact resistivity 0.02 \mathrm{\Omega}\cdot \text{cm}^{2}$ . After thermal treatment, however, a contact with a chemical oxide-terminated substrate and without Al 2 O 3 exhibited the lowest recombination with a measured SRV of 40 cm·s−1 and contact resistivity below 0.01 \mathrm{\Omega}\cdot \text{cm}^{2}$ . Additionally, only annealed contacts without Al 2 O 3 exhibited ohmic characteristics. The data reported in the present work demonstrate the benefits of certain passivation schemes over others and may aid in the design of future solar cells.
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