Abstract
Ovonic threshold switching (OTS) selector is becoming the most suitable candidate for selector devices in memristor crossbar array, owing to its high selectivity and fast response time. However, device endurance and variance are persistent tricky problems for application. In this article, a novel symmetric multilayer OTS selector based on simple GeSe and SbTe-doped GeSe was investigated. The results showed improving selector performed extraordinary endurance up to 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> and the fluctuation of threshold voltage is 1.5 %. These developments pave the way towards tuning a new class of OTS materials engineering, ensuring improvement of electrical performances.
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