Abstract
We measure the thermal-electric feedback coefficients of heterojunction bipolar transistors (HBTs) grown by various sources and designed with various epitaxial structures. These HBTs include Npn GaInP/GaAs, Npn graded AlGaAs/GaAs HBTs, Npn abrupt AlGaAs/GaAs and Pnp AlGaAs/GaAs HBTs. Despite the drastic difference in the HBTs under investigation, the measured thermal-electric feedback coefficients are not significantly different.
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