Abstract
In this work, we analyze in depth multiple characteristic data of a representative population of radenv-ADCs (analog-to-digital converters able to operate under radiation). Selected ADCs behave without latch-up below 50 MeV·cm2/mg and are able to bear doses of ionizing radiation above 50 krad(Si). An exhaustive search of ADCs with radiation characterization data has been carried out throughout the literature. The obtained collection is analyzed and compared against the state of the art of scientific ADCs, which reached years ago the electrical performance that radenv-ADCs provide nowadays. In fact, for a given Nyquist sampling rate, radenv-ADCs require significantly more power to achieve lower effective resolution. The extracted performance patterns and conclusions from our study aim to serve as reference for new developments towards more efficient implementations. As tools for this purpose, we have conceived FOMTID and FOMSET, two new figures of merit to compare radenv-ADCs that consider electrical and radiation performance.
Highlights
Several high reliability applications such as HEP, avionics, defense and space demand ADCs operating in harsh radiation and extreme temperature environments [1,2]
We have considered a total of 22 fields for each ADC: power consumption P, differential and integral non-linearities DNL/INL, effective number of bits ENOB, Nyquist sampling rate f s, input Nyquist bandwidth f in, FOMW, FOMTID for low and high dose rates, FOMSET for transients and upsets, operational temperature range (T range), TID for low and high dose rates LDR/HDR, LETth for latch-up events, Weibull curve limits for transients and upsets, SEE test method, technology and architecture
After an exhaustive search in the literature, we have analyzed a collection of radenv-ADCs able to bear TID above 50 krad(Si) and without latch-up below 50 MeV·cm2 /mg regarding resolution, characteristic frequencies, power efficiency, radiation performance, manufacturing technologies, circuit architectures, and possible applications
Summary
Several high reliability applications such as HEP (high energy physics), avionics, defense and space demand ADCs operating in harsh radiation and extreme temperature environments [1,2]. We extract patterns on conversion resolution, characteristic frequencies, radiation performance, power efficiency, architectures and manufacturing processes of radenv-ADCs. After an exhaustive search in the literature, we have gathered a collection of ADCs without degradation of electrical performance below 50 krad(Si) of TID and with a latch-up LETth (linear energy transfer threshold) above 50 MeV· cm2 /mg. The main contributions of this study with regard to previous analyses [16,17,18,19,20] are the inclusion of transients and upsets, the comparison of electrical performance patterns with scientific ADCs, the analysis of the COTS subset and the definition of new FOMs considering radiation performance.
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