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Abstract
In this work, we present a plasmonic near infrared light photodetector for the detection of 980 nm illumination. The plasmonic photodetector is fabricated by modifying single layer graphene (SLG)/InP Schottky junction diode with SiO2 encapsulated gold nanorods (SiO2@AuNR), which can confine the incident NIR light by inducing obvious localized surface plasmon resonance, according to theoretical simulation based on finite element method. This study shows that after decoration with plasmonic SiO2@AuNR, the device performance in terms of photocurrent and responsivity is considerably enhanced. In addition, the device exhibited a very fast respose rate which is able to monitor switching optical signals with a frequency as high as 1 MHz, suggesting a potential application for sensing high‐frequency optical signals. This study manifests that the present plasmonic NIR photodetector will have great potential in future optoelectronic devices application.
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