Abstract
A thermo-electric (TE) infrared detector array composed of 23 thermopiles, each with 5 thermocouples on a suspended beam of 650 × 36 µm2 dimensions, has been fabricated in a CMOS-compatible MEMS process. The array is used for realization of an IR micro-spectrometer in the 1–5 µm spectral range. Interference filter-based IR absorbers using titanium/aluminum layers with a silicon carbide cavity layer have been designed, fabricated and validated. These thin film stacks are more suitable for the subsequent processes as compared to conventional techniques. The silicon carbide layer is also used for device protection. The TE detector with an interference filter-based absorber features a sensitivity of 294 V W−1 in the 2.15 µm wavelength range and a thermal time constant of 4.85 ms in vacuum.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
