Abstract
This study reports on the use of a substrate-reclamation technology for a gallium nitride (GaN)-based lighting-emitting diode (LED) wafer. There are many ways to reclaim sapphire substrates of scrap LED wafers. Compared with a common substrate-reclamation method based on chemical mechanical polishing, this research technology exhibits simple process procedures, without impairing the surface morphology and thickness of the sapphire substrate, as well as the capability of an almost unlimited reclamation cycle. The optical performances of LEDs on non-reclaimed and reclaimed substrates were consistent for 28.37 and 27.69 mcd, respectively.
Highlights
Gallium nitride (GaN) is a direct-bandgap semiconductor
Sapphire (Al2 O3 ) has become a key material for fabricating GaN-based lighting-emitting diode (LED) because it serves as an excellent epitaxial substrate due to its small lattice-constant mismatch with GaN
The sample consisted of GaN-based LED epilayers grown on a patterned sapphire substrates (PSSs) (GaN-epi/PSS), which we fabricated by metalorganic chemical vapor deposition
Summary
Gallium nitride (GaN) is a direct-bandgap semiconductor It is commonly used for fabricating light-emitting diodes (LEDs) due to their wide bandgap, chemical stability, and high temperature stability. These LEDs emit from the ultraviolet to the visible range [1,2,3]. Patterned sapphire substrates (PSSs) constitute an important epitaxial substrate for GaN-based LEDs because they enhance the light-extraction efficiency and internal quantum efficiency of LEDs [4,5,6]. Reclaiming the sapphire substrate for GaN-based LED wafers can significantly reduce the manufacturing cost of LED chips. The disadvantages of CMP include process complexity, surface scrapes, and thinning of the sapphire substrate.
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