Abstract
Describes a subnanosecond-gate array with 2000 gates fabricated by an advanced bipolar process. A 700-ps delay time was achieved for a basic ECL gate under a general usage condition of a 3 fan-in, 3 fan-out and 3-mm wiring length, with power dissipation of 1.9 mW/gate. A 450-MHz typical toggle frequency has been obtained by using a series-gated flip-flop. Utilizing an integrated computer-aided design system, 100% routability has been attained for automatic placement and wiring in spite of 90% cell utilization. Low thermal resistance (6/spl deg/C/W) packages are used for this LSI chip to permit its installation in an air-cooled system.
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