A submillimetre-wave SIS mixer using NbN/MgO/NbN trilayers grown epitaxially on an MgO substrate

Abstract

We have designed, fabricated and tested a quasi-optical superconductor–insulator–superconductor (SIS) mixer employing distributed NbN/MgO/NbN tunnel junctions and NbN/MgO/NbN microstriplines at submillimetre-wave frequencies. These trilayers were fabricated by dc- and rf-magnetron sputtering on an MgO substrate at ambient temperature so that the NbN and MgO films were grown epitaxially. Our SIS mixer consists of an MgO hyperhemispherical lens with an antireflection cap and a self-complementary log-periodic antenna made of a single-crystal NbN film, on which the distributed SIS junctions and the two-section impedance transformers were mirror-symmetrically placed at the feed point of the antenna. As designed, the junctions are 0.6 μm wide and 15.5 μm long, which is sufficient to absorb the incoming signal along this lossy transmission line, assuming a current density of 10 kA cm−2. The mixer showed good I–V characteristics, with subgap-to-normal resistance ratios of about 13, although weak-link breaks were observed above the gap voltage. The minimum double side band receiver noise temperature was 334 K at 678 GHz, including the input noise of about 200 K as estimated by the standard technique. The noise temperature gradually rose to 672 K at 820 GHz. This behaviour may be caused by RF losses from the weak-link parts, due to the steps between the distributed junctions and the microstriplines being less than 1 μm wide.