Abstract
Narrow-linewidth silicon-based lasersplay an important role in the field of silicon photonics. In this paper, we have proposed a high performance narrow-linewidth silicon-based Er silicate laser, based on strip-loaded DFB waveguide with a hybrid pump and signal co-resonant cavity. The saturated output power can reach over 90 mW at 1535 nm, with a maximum power conversion efficiency of 66%. The pump threshold is about 22 mW, and the laser linewidth is also as narrow as about 755 Hz. The results provide a new way for future scale integrated ultra-narrow-linewidth silicon-based lasers application.
Highlights
Silicon-based laser, as the critical part of silicon photonic devices, is one of the most attracting frontier topics in the field of silicon photonics
Integration of high performance narrow-linewidth lasers on a silicon photonics platform is important for several applications, such as ultra-high-speed optical communication, long-distance space laser communication, ultra-high resolution Lidar, optical sensing and other fields [1]
We have proposed a high performance silicon-based Er silicate laser, based on hybrid Er silicate-Si3N4 strip-loaded distributed feedback (DFB) waveguide with a pump and signal co-resonant cavity
Summary
Silicon-based laser, as the critical part of silicon photonic devices, is one of the most attracting frontier topics in the field of silicon photonics. Hybrid III-V silicon-based lasers usually integrate frequency-selective structures in resonators or couple with mode-selective devices outside resonators to control gain and loss at different wavelengths, so as to compress their laser linewidth [1]. They have been shown to generate several MHz optical linewidth with phase-shifted distributed feedback (DFB) cavities, but these approaches generally require complex fabrication steps, or careful temperature control [2].
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