Abstract
This paper presents a sub-2-dB Noise Figure (NF) wideband differential Common Gate (CG) Low Noise Amplifier (LNA) in 0.18µm CMOS technology. The circuit benefits from several new techniques to improve the overall performance. A new current bleeding scheme is proposed in which not only enhances the gain of the circuit but also improves transconductance and noise performance simultaneously. In addition, double positive feedback is employed with only an auxiliary NMOS transistor to break the trade-off between noise and input matching condition of the CG structure. Moreover, the added transistor is biased in moderate inversion region to form pre-distortion performance and sink third order nonlinearity of main transistors at the input. Thus, low noise figure is obtained simultaneous with good linearity. Post-layout simulation results in TSMC 0.18µm RF-CMOS show a voltage gain of 20.1dB with a −3dB bandwidth of 0.38–2.7GHz, while S11 is below −10dB over the frequency band. The minimum NF equals to 1.88dB and an average NF of 2.04dB is achieved over the frequency band. Third Input Intercept Point (IIP3) of the proposed circuit is +6dBm. The circuit occupies an area of 0.055mm2 while consuming 2.55mA from a 1.2-V supply voltage.
Published Version
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