A Sub-1V Full CMOS Bandgap Voltage Reference with a Body Bias

Abstract

In this paper, a low-power sub-1V bandgap voltage reference(sub-BGR) without any resistors and BJTs is presented. To reduce process variations without bipolar junction transistors(BJTs), a weighted Vgs structure is modified with a body bias for the generation of both complementary-to-absolutetemperature(CTAT) voltage and proportional-toabsolute-temperature(PTAT) voltage. Moreover, the proposed sub-BGR is operated in subthreshold region to minimize the power consumption. The proposed sub-BGR is implemented with a 0.18 μm deep N-well (DNW) CMOS technology. The measured results show that the temperature variation of 55ppm/°C is obtained with a temperature range from -40°C to 80°C. The power supply rejection ratio(PSRR) of -44 dB at 100 Hz is achieved while consuming total power of 38 nW at the supply voltage of 0.8 V. Measured output reference voltage is 435 mV and the active area is 150 μm by 49 μm.