Abstract

The fast switching operation of wide-bandgap power semiconductor devices deteriorates the Electromagnetic interference (EMI) noise characteristics of a power converter. The parasitic inductance in a power module is one cause of noise generator. This paper calculates parasitic inductance in a wiring pattern of module with Partial Element Equivalent Circuit (PEEC) method, and evaluates the current distribution in a module by magnetic near-field intensity measurement to discuss the suitable wiring pattern design for intelligent silicon carbide (SiC) power module.

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