Abstract
Here we report the behavior of photo response properties of indium gallium zinc oxide (IGZO) thin film grown by pulsed laser deposited on quartz. During IGZO film illumination in the wavelength range from 500∼300nm (visible to ultraviolet) the photo current increased gradually while a large increase of photo-current was observed below 325 nm i.e. the band edge wavelength. The maximum photo-current was observed at 300nm. By removing the illumination the polycrystalline film of IGZO shows the persistence nature of photocurrent and persistence strongly depends on the wavelength of incident light. By fitting the dynamic response, we observed the rising time (τr) and decay time (τd) of photo current is 120-205 s and 1000-5500s respectively. The observed results are consistent with the optical gap of ∼3.68 eV extracted from the absorption measurement.
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