A study on wafer level vacuum packaging for MEMS devices

Abstract

A new vacuum packaging process at the wafer level is developed for the surface micromachining devices using glass–silicon anodic bonding technology. The rim for the glass–silicon bonding process which is needed to prevent vacuum leakage is built up simultaneously as the structure is being etched. The mechanical resonator is used as a tool for evaluating the vacuum level of the packaging. The inside pressure of the packaged device was measured indirectly by measuring the quality factor of the mechanical resonator. The measured Q factor was about 5 × 104 and the estimated inner pressure was about 1 mTorr. It is also possible to change the inside pressure of the packaged devices from 2 Torr to 1 mTorr by varying the amount of Ti getter material. The yield of the vacuum packaging process is about 80% and vacuum degradation was not observed after 1000 h had passed. The developed vacuum packaging process is also applied to resonant accelerometers which need a high vacuum environment to implement higher performance.