Abstract
In this study, we investigated the transparent electrode and mechanical properties of indium tin oxide (ITO) thin films deposited from recycled targets of In2O3 (90 wt %) and SnO3 (10 wt %). We also evaluated the effect of their heat treatment at different temperatures. The ITO thin film deposited on the glass substrate at ambient temperature exhibited microcrystallization characteristics in which the amorphous state was incorporated. When the annealing temperature was over 200 °C, the ITO thin film showed stable transparent electrode characteristics with a sheet resistance value of 7.2 Ω/sq and high transmittance of more than 85% in the visible light region through recovery and recrystallization. Under compressive stress, the ITO thin film exhibited stable elastic modulus and hardness values of more than 110 GPa and 6.0 GPa, respectively. It is anticipated that these outcomes will meet the electrical, optical, and mechanical property requirements for commercial ITO transparent electrodes.
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