Abstract
In this work, silicon-on-insulator wafers fabricated by the separation-by-implantation-of-oxygen method were modified by Si ion implantation to improve their total-dose radiation hardness. The chemical bonds of Si in the buried oxide layer were investigated using x-ray photoelectron spectroscopy. The results of Si 2p were presented to demonstrate the mechanism of radiation hardness with the formation of Si nanocrystals by ion implantation with the post anneal process. The pseudo-MOS method was used to test the ID–VG characteristics of the wafers before and after irradiation. The results showed that the processes of the buried oxide affected the character of the I–V curves of the pseudo-MOS, and a proper modification technology could improve the radiation hardness of the material remarkably.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
