Abstract

Because modern electronic systems are likely to be exposed to high intensity radiated fields (HIRF) environments, there is growing interest in understanding how electronic systems are affected by such environments. Backdoor coupling in particular is an area of concern for all electronics, but there is limited understanding about the mechanisms behind backdoor coupling. In this work, we present a study on printed circuit board (PCB) backdoor coupling and the effects of via fencing. Existing work focuses on ideal stackups and indicates that edge radiation is significantly reduced by via fencing. In this study, both full wave electromagnetic modeling and experimental verification are used to investigate both ideal and practical PCB stackups. In the ideal scenario, we find that via fencing substantially reduces coupling, which is consistent with prior work on emissions. In the practical scenario, we incorporate component footprints and traces which naturally introduce openings in the top ground plane. Both simulation and experimental data indicate that via fencing in the practical scenario does not substantially mitigate coupling, suggesting that PCB edge coupling is not the dominant coupling mechanism, even at varying angles of incidence and polarization.

Highlights

  • In recent years, there has been growing concern about the effects of high intensity radiated fields (HIRF) environments on electronic devices and systems

  • There has been growing concern about the effects of high intensity radiated fields (HIRF) environments on electronic devices and systems. These high-intensity fields are generated by various sources including high-power long-range communication antennas as well as directed energy weapons—sometimes referred to as intentional electromagnetic interference (IEMI) sources

  • As will be shown in the results presented here, a field strength of this magnitude can generate an induced voltage of 10 V or more, which is certainly concerning for modern electronics that typically operate with a 5 or 3.3 V supply voltage

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Summary

Introduction

There has been growing concern about the effects of high intensity radiated fields (HIRF) environments on electronic devices and systems These high-intensity fields are generated by various sources including high-power long-range communication antennas as well as directed energy weapons—sometimes referred to as intentional electromagnetic interference (IEMI) sources. The Federal Aviation Administration (FAA) and the Department of Defense (DoD) have taken action to implement hardening requirements and develop a better understanding of how HIRF environments affect electronic devices [1,2,3,4,5,6,7,8] These standards as, well as other reports, indicate that typical field strengths encountered in HIRF environments can reach tens of kilovolts per meter (10 kV/m) [9,10,11]. Supply voltages are constantly trending downward in order to meet power and thermal requirements for various applications, which naturally exacerbates this problem further

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