Abstract

New In2O3-doped phosphate zinc tellurite glasses synthesized using melt-quenching method were investigated. It was observed that the synthesized glasses exhibit transparent properties. Densities of synthesized glasses changed significantly related to the doping ratio of In2O3. This implies that radiation shielding abilities can be enhanced. In other respects, the almost linear elevation in molar volume values indicated that the glass network expanded as a result of the ZnO/In2O3 translocation. As the additive ratio increases, the optical band gap value increases from 2.96 eV to 3.47 eV, while the Urbach energies decrease from 0.350 eV to 0.180 eV. In2O3 contribution has a regulatory effect on the structure of phosphate zinc tellurite glasses. In phosphate zinc tellurite glasses evaluated in terms of radiation shielding properties, it was observed that the In2O3 additive contributed significantly to the shielding properties and the glass with the best radiation shielding was 6 mol% In2O3 doped glass. It is obvious that by raising the density values of the produced glasses, the ZnO/In2O3 translocation in phosphate zinc tellurite glasses enhanced their radiation shielding properties.

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