Abstract
The oxidation kinetics of silicon in inductively coupled oxygen plasma (ICP) was studied at temperatures ranging from 350 to 450 °C. The oxide growth kinetics was described by a linear-parabolic growth law, with a rapid initial growth and a negative linear-rate constant. Under oxygen pressure of 10 mTorr, the initial oxide growth at 350 °C (thickness below 25 nm) was faster than at 400 °C. An analysis of transverse-optical mode frequencies and etch rates indicated that the density of the surface oxide was lower than that of the bulk oxide. The oxidation kinetics was explained qualitatively by assuming that the ICP oxide consisted of a surface layer with a larger diffusion coefficient and a bulk layer with a smaller diffusion coefficient. On the other hand, the ICP oxidation of silicon with a thin chemical oxide showed a positive linear-rate constant and no surface layer effect, supporting the fact that the oxide grown by the ICP oxidation has a low-density surface layer with a larger diffusion coefficient.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
